| 摘要 |
PURPOSE:To realize a wiring having a heat resistance and a small electric resistance, by forming a nitrified tungsten-titanium alloy (WTiH) by a reactive sputtering method, and by connecting subsequently a low-resistance metal such as Au and Ag onto WTiH. CONSTITUTION:An N type GaAs layer 2 having a carrier density of 1X10<17>cm<-3> and a thickness of 0.3mum is made to grow epitaxially on an N type GaAs substrate 1 having a carrier density of 10<18>cm<-3> or more, and a WTi alloy 3 whose content of Ti is 10wt%, for instance, is connected 1,500Angstrom thick onto the N type GaAs in an argon (Ar) gas by a spattering method. Next, WTiH 4 is formed 300Angstrom thick on WTi. WTiH is formed by introducing a nitrogen (N2) gas into an Ar gas of 4X10<-3>Torr so as to be 8X10<-3>Torr, for instance, by using WTi as a target with a power of 300W, and by applying a spattering method wherein a DC double-pole sputtering device. Then, a low-resistance metal 5, such as gold (Au), is connected 5,000Angstrom thick onto WTiH. |
