| 摘要 |
<p>PURPOSE:To facilitate the cutting of a fuse by a method wherein the fuse is formed of a laminate structure of a polycrystalline silicon film and a metal film and made to be an intermetal compound for its blowoff by applying laser beams or electron beams thereto, while an oxide film is formed on the surface of the metal film to etch the intermetal compound selectively for removal. CONSTITUTION:A silicon dioxide film 24 is formed as an insulator layer on the surface of a P type silicon substrate 21, and thereon a polycrystalline silicon film 25 constituting a fuse is formed. Next, the polycrystalline silicon film 25 is positioned on a part between impurity regions 22 and 23 by patterning. Then, after a silicon dioxide film 26 is formed as an insulator layer on the surface, a contact hole of the impurity regions 22 and 23 is formed, while photoetching is applied so that the surface of the polycrystalline silicon film 25 is exposed. Furthermore, a molybdenum film 27 is evaporated as a metal film on the surface thereof, and the fuse is constituted by a laminate structure of the film 27 with the polycrystalline silicon film 25. Lastly, laser beams are applied to a region 28 of the molybdenum film 27 above the polycrystalline silicon film 25.</p> |
