| 摘要 |
PURPOSE:To improve crystallizability of a semiconductor film having subjected to a solid-state epitaxial growth, by a method wherein the crystallizability of a layer to be a seed of a solid-state epitaxial growth is previously improved by irradiation of an energy beam. CONSTITUTION:On a sapphire substrate 1, a silicon film 2 is epitaxially grown and subjected to an ion implantation to transform the surface layer of the silicon film 2 into an amorphous silicon layer 21 having a thickness of about 0.1mum. Then, the amorphous silicon layer 21 is irradiated with Pd-YAG laser beams to obtain a melt-recrystallized silicon layer 3. When an ion implantation is effected again, the injected silicon ions pass through the non-defective silicon layer 3 and reach the silicon layer thereunder to transform the silicon layer into an amorphous silicon layer 22. Thereafter, the whole is annealed for 60min in a nitrogen atmosphere at 600 deg.C. Thereby, the amorphous silicon layer 22 performs a solid- state epitaxial growth by employing the non-defective silicon layer 3 as a seed. As a result, it is possible to obtain a monocrystalline film 31 including substantially no crystal defects as a whole. |
