| 摘要 |
PURPOSE:To improve the light detecting sensitivity of the titled device by a method wherein a V-groove structure is formed at the light-receiving section of a photosensor, and the depletion layer width of a P-N junction is effectively utilized. CONSTITUTION:Using the patternized insulation oxide film 2 as an etching mask, a V-groove 1a is formed by performing an anisotropic etching on the surface of a P type semiconductor substrate 1, and at the same time, an N type region 4a is formed by ion-implating an AS, for example, as shallow as possible as impurities from the surface of an N-groove 1a. As for each P-N junction of a for each P-N junction of a source section 3 and a drain section 8 to be used for light receiving, when a gate section 6 is in OFF position and light 11 of certain wavelength region is irradiated on the N type region 4a of the source 3 to be used for light receiving, the light 11 is irradiated from oblique direction to the depletion layer 12a of the P-N junction, and at the same time, the light 11a which was reflectedon the surface simultaneously with the light 11 is irradiated from the oblique direction on the depletion layer 12a from the surface on the opposite side in the same manner as above, light 12 and reflected light 11a are absorbed into the depletion region 12a, a pair of electron 13 and a hole 14 is formed, the electron 13 and the hole 14 moves to an N type region 4a and a P type region respectively, thereby enabling to reduce the inverted bias potential difference of the source section 3. |
