| 摘要 |
PURPOSE:To remove the leakage currents of a MOS transistor by using a process forming the gate oxide film of the MNOS memory cell in the mixed gas of nitrogen and oxygen. CONSTITUTION:In a process shaping the MNOS memory cell after the diffusion process of the source-drain of the silicon gate MOS transistor, the first layer gate oxide film of the MNOS memory cell is oxidized in the mixed gas, the mixing ratio of nitrogen and oxygen therein is approximately 100:1-1,000:1, at the temperature of 900 deg.C or higher and 1,200 deg.C or lower and formed. Consequently, a thin oxide film with 50Angstrom or thinner thickness is formed to the gate section of the MNOS memory cell. Accordingly, an annealing treatment effect is produced in the Si-SiO2 interface of the cell, and interface sub-density is reduced. |
