| 摘要 |
PURPOSE:To remove the disconnection of an electrode metal, and to improve reliability by removing difference in stages in a boundary between a SiO2 film and a polycrystal Si layer. CONSTITUTION:The SiO2 layer 2 is thermally oxidized and grown to one flat main surface of a P type semiconductor substrate 1, and an opening 6 is shaped selectively to the layer 2. Polycrystal Si containing an N type impurity in high concentratio is deposited onto the upper surface of the layer 2 and the upper suface of the opening 6. The surface of the polycrystal Si layer deposited into the region of the opening 6 is coated with a photo-resist 7, and the polycrystal Si layer not coated with the photo-resist 7 is changed into a SiO2 film 8. The photo-resist 7 is removed, the high-concentration N type impurity in a layer 4 is diffused to the substrate 1, and a high-concentration N type impurity region 3 is formed. Lastly, the surfaces of the SiO2 film 8 and the layer 4 are coated with the metal such as Al, and etched in desired shape, and metallic electrode wiring 5 to the high-concentration impurity region 3 having shallow junction depth is obtained. |
