| 摘要 |
PURPOSE:To control resistance value easily and accurately from one part exposed of a polycrystal semiconductor film by forming the polycrystal semiconductor film onto a high-melting point metallic film and shaping a metallic wiring layer onto the polycrystal semiconductor film while exposing one part of the polycrystal semiconductor film. CONSTITUTION:The first high-melting point metallic film 3 is formed onto an insulator film 2 on a semiconductor substrate 1, a predetermined pattern is shaped, the polycrystal Si film 4 is stacked and formed, and a prescribed pattern is shaped. A section on the connection region of the film 3 and the film 4 is exposed selectively, and the second high-melting point metallic film 5 connected to the film 4 is molded. The silicide layers of the film 3 and the film 5 are formed through heat treatment at a high temperature, and a section consisting of the film 3-the silicide layer-the film 4-the silicide layer-the film 5 is used as a resistor. A laser is irradiated to the connection region of the film 4 and the film 3 after the film 5 is shaped, the interface is melted, the thickness of the silicide layers is controlled, and predetermined resistance value is obtained. |
