| 摘要 |
PURPOSE:To generate breakdown rapidly and uniformly in the junction section on of a P<+>-N<+> diode by surrounding the first and second protective diodes by conductor wiring at a uniform interval and each connecting respective conductor wiring to power supplies VSS, VDD. CONSTITUTION:The first protective diode consisting of an N<+> layer 13 and a P<+> layer 14 joining while surrounding the layer 13 is shaped into a P<-> well 12. The second protective diode is formed to the surface of a substrate 11 by molding a P<+> layer 17 and an N<+> layer 18 connecting while surrounding the layer 17. An oxide film 21 is formed to the surface of the substrate 11, and contact windows 22-26 are shaped through etching. The conductor wiring 27- 30 is formed onto the windows, and the wiring 27 is connected to the power supply VSS and connected to a P<+> layer 16 through the window 24. The wiring 28 surrounds the layer 14 at a uniform interval, and equally applies voltage VSS to the first protective diode. An N<+> layer 20 surrounding the second protective diode is connected to the power supply VDD by the wiring 29 through the window 26. The layer 13 and the layer 17 are connected by the wiring 30. |
