| 摘要 |
PURPOSE:To completely remove the protective film on a bonding pad and to improve the reliability of wire bonding by a method wherein a protective film for detecting the end of etching is provided. CONSTITUTION:A semiconductor element is formed on a semiconductor substrate 1 and an SiO2 film and a bonding pad 3 are formed on the semiconductor element. Next, a first protective film 4 consisting of SiO2 is formed on the pad 3. Next, a second protective film 5 for detecting the end of etching for a third protective film is formed on the film 4. Next, the third protective film 6 consisting of Si3N4 and a resist mask 7 are formed on the film 5. Next, a mask 7 is used as a mask and the films 6, 5 are etched by a plasma active seed 9. Emitting rays 10 during etching from the Si3N4 film 6 and that during etching from the polycrystalline silicon film 5 have different spectra. Therefore, the etching of the films 5, 6 are simultaneously be confirmed and the film 6 can completely be removed. Next, the removal by etching is applied to the film 4. |
