| 摘要 |
PURPOSE:To shorten the manufacturing process of the MIS field-effect transistor by forming a mask film in double layer structure, which has a window for shaping a gate electrode and an upper layer thereof everhangs, onto a thin insulating film on an active region. CONSTITUTION:The silicon dioxide-gate insulating film 24 is formed, a silicon nitride film 25 and a phosphorus silica glass film 26 are shaped, and the window 26A for the gate electrode is formed so that the film 26 overhangs. When shaping a metallic silicide film 27, the gate electrode 27G is formed to the window 26A while being divided by difference in stages. The film 26 is dissolved and removed, the film 27 is lifted off, and shallow n<+> regions 28s, 29s are shaped while using the film 25 as a mask. A silicon dioxide insulating film 30 is molded onto the electrode 27G, the film 25 is removed, and deep n<+> type regions 28d, 29d are formed while employing the film 30 and a film 23 as masks. An electrode contact windown is shaped, and wiring is formed. |
