发明名称 SEMICONDUCTOR INTEGRATED MEMORY CIRCUIT
摘要 A semiconductor integrated circuit device has an array of memory cells formed by integrated injection logic. A desired number of dummy cells are provided at both ends of each line of the array, so that a write current, which flows when the memory cell near the dummy cell is selected, is shunted by the dummy cell, thereby the currents which flow in the memory cells in the line of the memory array are equalized.
申请公布号 DE2964943(D1) 申请公布日期 1983.04.07
申请号 DE19792964943 申请日期 1979.05.02
申请人 NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORPORATION;FUJITSU LIMITED 发明人 KAWARADA, KUNIYASU;ONO, CHIKAI;SUZUKI, MASAO;TOYODA, KAZUHIRO
分类号 G11C5/06;G11C11/411;H01L27/102;(IPC1-7):H01L27/02;G11C11/40 主分类号 G11C5/06
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