发明名称 CHARGED BEAM EXPOSURE
摘要 PURPOSE:To lithograph a pattern by correcting chip shapes without using a chip mark by a method wherein the positions of the squares of chips are presumed from the measured information on the height of a sample and the detection result of wafer marks. CONSTITUTION:Prior to pattern lighography, the height distribution of a sample 10 is measured. The measuring points are lattice points including the square point 12 of each chip 11 and wafer marks 13-16. Next, presumed chip marks 12 and wafer mark positions are calculated from the result of height measurement, wafer mark co-ordinates, and the design data of the chips. Where, no marks 12 actually exist. Next, the positions of the marks 13-16 on the data 10 are detected by a method used charged beams. The position co-ordinates of actual marks 13-16 obtained here correct the positions of position co-ordinates obtained by operation.
申请公布号 JPS5858733(A) 申请公布日期 1983.04.07
申请号 JP19810158515 申请日期 1981.10.05
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 SHIMAZU NOBUO;SHIMIZU AKIRA
分类号 H01L21/027;H01J37/317;(IPC1-7):01L21/30 主分类号 H01L21/027
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