| 摘要 |
PURPOSE:To secure an element itself to the earthing surface in accordance with the method of earthing by securing a semiconductor chip on metal material for earthing and by connecting such metal material to the earthing region of chip through the conductor provided along the side surface of chip and the conductor on the chip surface. CONSTITUTION:The n<-> epitaxial layer 113 is formed over the p<-> type Si substrate 111 having the n<+> buried layer 112, the part 117 except for the upper part of the layer 112 is thermally oxidized, and the n emitter 115, p base 114 and n collector leadout layer 116 are formed over the layer 113. Then, a window is opened on the insulating film 118 only in the region 119 (layer 115), a metal 110 is coated on the entire part of external surface of layer 116 and the region 119, this metal layer 110 is covered with an insulating film 211, and the output and input electrodes 214, 215 are deposited through the collector and base electrode holes 212, 213. The rear side of this wafer 217 is turned to upside and the quartz plate 218 is adhered thereon, the metal material 219 is formed thereon, the silicon Si is etched, thereby elements are isolated and the metal material 110 for earthing is exposed. Next, it is covered with a metal material 221 and thereby the earthing electrode conforming to each earthing method is completed along the side surface from the element surface thereby unnecessitating a vessel of exclusive use for earthing method. |
