| 摘要 |
PURPOSE:To facilitate the design of fine patterns, by dipping a positive type resist applied when forming fine patterns into chlorobenzene before or after exposure, and shaping the resist pattern by oxygen plasma after developing by spraying the developer. CONSTITUTION:After the positive resist is applied on a semiconductor substrate or a semiconductor substrate whereon an insulating film is adhered, a pre-bake is performed, and the pattern exposure is performed by using a reduced projection exposure machine. Next, the resist is dipped into the clorobenzene solution for approx. 5min so that the resist shoulder is hardened without the generation of resist collapse at the shoulder. Here, dipping can be performed also before the pattern exposure. Thereafter it is heat-treated for 10min approx. at 70 deg.C, the developer is sprayed onto this surface by a spray method with the pressure at 2.0kg/cm<3>, and succeedingly it is exposed to oxygen plasma for 0.5min approx. at 60 deg.C. Thus, the shift amount from the mask dimension is restricted to approx. 1.0mum. |
