| 摘要 |
<p>A process for manufacturing a semiconductor device comprises providing a substrate (1); forming a plurality of semiconductor layers (S1,S2) on the substrate (1), each layer including one or more semiconductor elements; and forming an insulating film (I1) between each pair of the semiconductor layers (S1,S2) to insulate the layers from one another. The process is characterized by the steps of forming in at least one semiconductor layer a monitoring device (M) for evaluating the functions of semiconductor elements formed in the one semiconductor layer (S1,S2); and evaluating the functions. </p> |
