| 摘要 |
PURPOSE:To obtain a highly reliable high dielectric strength diode by laminating diode chips manufactured using the Si substrates through the irradiation of neutron. CONSTITUTION:Fluctuation of specific resistance is reduced when the neutron is irradiated to the Si. Namely, such fluctuation can be kept within + or -5% for a sheet of chip or to + or -10% or less between plates. Fluctuation of backward breakdown voltage and leakage current of diode chip formed by such Si substrate is a little. Thereby, uniformity of characteristic of element as a whole and thermal stability can be improved drastically and accordingly, a highly reliable high breakdown voltage diode can be obtained. |
