| 摘要 |
PURPOSE:To improve the pause characteristics and to increase the reliability of the memory working, by setting the timing of generation of the reference potential at the time right after the activation of an RAM so that there is no relation with the leak current that is allowed within a circuit element. CONSTITUTION:A dummy cell 12 which supplies the reference signal is connected to the terminal of each bit line BL of an MOS dynamic RAM. A reference potential generating circuit 13 attached to the cell 12 generates the reference potential of about 1/2 value between the maximum and minimum potentials that are allowed to be written to the memory cell of the cell 12. The circuit 13 obtains about 1/2 potential by writing the maximum potential that can be written to the memory cell to the 1st capacity element CH during an inactive period and the minimum potential to the 2nd capacity element CL during an inactive period respectively and then distributing he charges of the elements CH and CL at an initial stage of an active period. The obtained about 1/2 potential is used as the reference potential. |
