发明名称 Semiconductor memory device
摘要 A semiconductor memory device includes a plurality of memory cells arranged in a matrix fashion, word lines each connected commonly to the memory cells arranged on the same row, plural pairs of data lines each pair connected commonly to the memory cells on the same column line, and a row decoder connected to the word lines. The semiconductor memory device further includes positive feedback amplifiers connected to the work lines, which respond to voltages on the word lines at a preset or higher level to pull up the potential on the word lines to a higher level.
申请公布号 US4379346(A) 申请公布日期 1983.04.05
申请号 US19800170687 申请日期 1980.07.21
申请人 TOKYO SHIBAURA DENKI KABUSHIKI KAISHA 发明人 OCHII, KIYOFUMI;MASUDA, MASAMI;KONDO, TAKEO
分类号 G11C11/417;G11C5/06;G11C11/408;G11C11/418 主分类号 G11C11/417
代理机构 代理人
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