| 摘要 |
PURPOSE:To largely suppress the decrease in the integration of a semiconductor device by preventing the displacement between the first layer and the second layer by patterning between the elements of the first layer with a mask. CONSTITUTION:An emitter region 6 and a base region 14 are composed on a substrate 1. Then, an L-shaped pattern is, for example, formed over a base region and an emitter region at once with a mask. After an emitter wiring aluminum 11 is removed from a region which has a through hole during the base wiring pattern, an interlayer insulating film 18 is formed. After a through hole 19a is further opened, a resist material 19 is removed, the second wiring material is covered, and a patterning is performed. In this manner, a base contact 3 and the second wiring pattern 20 are conducted through the hole 19a with the second wiring material 20a. With the structure, the displacement of the positions between the second wiring pattern and the first layer emitter and base wiring patterns can be eliminated. |
