| 摘要 |
PURPOSE:To facilitate the desired crystallization of a silicon film formed on an amorphous insulating film by a method comprising the steps of piling up non- single crystal silicon films on the top of each other; radiating laser beams or electron beams to the silicon films before inplanting ions into them; and adding an annealing process thereto. CONSTITUTION:An oxidized film 2 is piled on top of a glass substrate 1. A nitrided film is piled on top of the film and periodic grooves are formed. Subsequently, a polysilicon film 4 is piled on the surface and ions 5 are implanted into the polysilicon film before laser beams 6 are radiated thereto. In so doing, the polysilicon 4 is annealed and single crystallized, so that a single crystal silicon filmis grown and formed. Since the implanted ions in the polysilicon film 4 act as the nucleus of the crystal during annealing, the single crystallization of the polysilicon film 4 is greatly facilitated. Moreover, because a nitrided film 3 is used as a ground layer for the polysilicon film 4, the grooves can be provided with extremely high accuracy. |
