| 摘要 |
PURPOSE:To form a homogeneous and uniform plasma CVD film on a substrate when the plasma CVD film is to be formed on the substrate having the uneven part by a method wherein reaction gas and etching gas are mixed. CONSTITUTION:When the PSG film 3 is to be formed according to the plasma CVD method on the Si substrate 1 having the uneven part 2 of a V-shaped groove, etc., on the surface, reaction gas and etching gas are mixed. The PSG film 3 is formed in the atmosphere of mixed gas thereof. Accordingly because the energetically unstable V-shaped groove 2 can be etched easily by etching gas, growth of film on the V-shaped groove part result in the smooth surface. |
