| 摘要 |
PURPOSE:To form Si epitaxial layers having smooth surfaces and having favorable crystallinity selectively on a semiconductor substrate by a method wherein Si3N4 films are formed on the sides of an SiO2 film having an opening on the Si substrate, and depressurized epitaxial growth is performed using SiH2Cl2-H2. CONSTITUTION:After the SiO2 film 2 is accumulated on the Si single crystal substrate 1, fine processing is performed on the SiO2 film 2 thereof using the lithography technique and the dry etching technique. Then the Si3N4 films 6, 6' are accumulated on the side walls of the SiO2 film 2 formed with the opening according to processing mentioned above. Then depressurized epitaxial growth is performed using SiH2Cl2-H2 on the single crystal substrate 1 using the Si3N4 films 6, 6' thereof as the mask. Accordingly epitaxial layers 3 having the smooth surfaces and having favorable crystallinity can be formed selectively. |
