发明名称 DRIVING CIRCUIT FOR SEMICONDUCTOR
摘要 PURPOSE:To obtain a power converter with small size and high efficiency while attaining high-speed turn-off, by supplying a positive driving current from a driving circuit power supply at turn-on to a control gate of a semiconductor and a negative driving current from a main circuit at turn-off. CONSTITUTION:A transistor (TR)Q1 turns on with a control circuit 3, a voltage is induced to windings n4, n5 of a base driving rransformer TB and a power TRQM is turned on by being supplied with a positive base current. Thus, the base.emitter of a TRQ2 are back-biased with a voltage drop of a diode D2 and the TRQ2 is turned off and a voltage is remained induced in a winding n3 of a main transformer TM. In interrupting a base current to the TRQ1 from the circuit 3, the Q1 is turned off. Thus, the TRQ2 turns on and a negative base current flows to the TRQM through the Q2 from the winding n3 to rapidly turn on the QM. Since the negative base current is obtained from a main circuit at the QM turned off, a driving power supply has only to supply required power for turning-on of the QM, allowing to attain small size.
申请公布号 JPS5856528(A) 申请公布日期 1983.04.04
申请号 JP19810153634 申请日期 1981.09.30
申请人 HITACHI SEISAKUSHO KK 发明人 ONDA KENICHI;ABE KIMIHITO;YABUNO KOUHEI;UEMURA TAKESHI
分类号 H02M1/06;H02M3/28;H02M3/335;H03K17/04;H03K17/61;H03K17/64;H03K17/695 主分类号 H02M1/06
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