| 摘要 |
PURPOSE:To inhibit the effect of heat to the lower layer when forming each layer constituting a multilayer LSI by jointly using instantaneous heating annealing treatment through energy-beam irradiation and high-pressure oxidation treatment and shaping each layer in succession. CONSTITUTION:When manufacturing a multilayer MOSIC, a SiO2 layer 2 is formed onto a Si substrate 1, the substrate 1 is partially exposed on a scribe line 4, and the whole surface is coated with poly Si. An exposed section is changed into a nucleus and Si is tuned into a single crystal through energy irradiation, and the first layer semiconductor layerIis formed. An impurity is injected to the position required of the layerIsuch as regions functioning as source-drain-channel, and instantaneous heating annealing treatment is partially executed by utilizing energy rays, such as electron beams, a laser, etc. A gate oxide film 6 is obtained by oxidizing the surface under the conditions of 25Kg/cm<2> pressure and 700 deg.C. The multilayer MOSIC is completed by stacking the II layer and the III layer through repeated said process. |
