| 摘要 |
PURPOSE:To prevent a silicon film from peeling off and to obtain a highly reliable semiconductor device by a method wherein the temperature difference between the silicon films on an insulating film and a substrate respectively is made as small as possible by regulating the scanning speed of laser beams for annealing the polycrystalline silicon film making contact with the substrate. CONSTITUTION:In the laser beam scanning in the direction of the arrow S, peeling off occurs in the neighborhood of the arrow B when the scanning speed is high and the arrow A when the speed is low. This is because the temperature difference is produced between the silicon on an insulating film 2 and a substrate 1, respectively. Such temperature difference is readily regulated by regulating the scanning speed of the laser beams. For instance, no peeling off will occur if the speed is set at 7-8cm/sec. In addition, provided that a preset scanning speed is employed only when a polycrystalline silicon film 3 making contact with the single crystal silicon semiconductor substrate 1 is annealed, high or low speeds may be employed for annealing other portions. |
