| 摘要 |
PURPOSE:To provide a semiconductor device having high reliability without causing a software error by coating a silicon monoxide film on the surface of a semiconductor integrated circuit chip, thereby forming an alpha-ray resistant element. CONSTITUTION:A metal mask 7 is disposed on the top of a semiconductor wafer 6, and silicon monoxide is sputtered or deposited further from above, thereby forming a silicon monoxide film 8 on the surface of the wafer 6. A semiconductor integrated circuit is formed on the region formed with the film 8. A fine line (a) designates the boundary between chips on the surface of the wafer, the wafers are cut along the line, thereby dividing the wafer into chips. A metal mask is formed around the film 8, and the pad of the chip is formed on the surface of the wafer 6 under the mask. The chips thus divided via the line (a) are bonded to a stem or the like, and are wire bonded to be coupled with the external device. |
