| 摘要 |
PURPOSE:To prevent the adhesion of foreign matters onto a surface to be etched, by carrying out plasma etching through an inclined magnetic field formed toward the central part of an electrode opposed to the end part of an electrode mounting an object to be treated in a plasma region having parallel electrodes. CONSTITUTION:To the peripheral flange part of the plasma region 9 of a plasma etching apparatus having a conventional structure, plural rod magnets having, for example, an inclination angle of about 30-60 deg. toward the center from the peripheral flange part of a lower electrode 2 are radially arranged and an inclined magnetic field is formed toward the central part of an upper electrode 3 from the electrode 2. In this condition, on a Cr film 11 deposited and formed on the surface of a glass base plate on the electrode 2, a substrate 8 to be treated having a resist mask pattern 12 formed thereon is mounted. Subsequently, CCl4 atmosphere with about 10<-2>-10<-4> Torr is held in an etching chamber 1 and plasma is generated between the upper and the lower electrodes by high frequency power to selectively etch the film 11. During this time, a fine segmental deteriorated resist substance scattered from the surface of the pattern 12 is mostly dropped to the peripheral part of the electrode 2 along the magnetic field 16 and the dropping and the deposition thereof to the etching surface is reduced to a large extent. |
