| 摘要 |
PURPOSE:To easily manufacture a nondislocated compound semiconductor single crystal contg. a desired amount of impurities, by using a crystal having a desired diameter obtained from a melt high in concn. of impurities as a seed crystal. CONSTITUTION:A GaAs single crystal 6 is grown, for example, by bringing a seed crystal 5 into contact with a GaAs melt 4 in a crucible 2 and pulling it up. In this manufacture of GaAs single crystal using the capsule method, (i) a nondislocated GaAs single crystal having a desired diameter is formed using a first GaAs melt contg. impurities, such as Si or S in high concn., and (ii) the obtained single crystal is cut at a face 7, the lower part is removed, the upper part of the signal crystal is used as a seed crystal 8, and a crystal is grown without changing a diameter from the second GaAs melt prepared by adding a prescribed amount of the first single crystal contg. said impurities to a pure GaAs melt. In the figure, a sign 1 expresses a heating oven and a sign 3 a B2O3 film. |
