| 摘要 |
PURPOSE:To obtain n- or i-type amorphous silicon contg. Al and introduced hydrogen atoms as a semiconductor material by evaporating Si and Al from evaporating sources in the presence of active hhdrogen and hydrogen ions a vacuum vessel to form a thin layer on a substrate. CONSTITUTION:This semiconductor material is n- or i-type amorphous silicon (a-Si) contg. 0.001-5atomic% Al and introduced hydrogen atoms. To form an i- type a-Si layer Al is added as mentioned above, and to form an n type layer a V group element such as Sb is added basides Al. When the Al content exceeds the upper limit, a p type layer is formed at all times. A substrate 4 in a vacuum vessel 1 evacuated to a high vacuum state is heated, a negative voltage is applied to the substrates 4, and active hydrogen and hydrogen ions are introduced from a gaseous H2 discharging pipe 7 set at an outlet facing to the substrate 4. Si and Al are evaporated from evaporating sources 8, 10, respectively to form said a-Si on the substrate 4. |
