| 摘要 |
PURPOSE:To obtain a glass composition for use in a semiconductor device improved in fluctuation of a glass film, by mixing a glass of ZnO-B2O3-SiO2 in the range of depositing coarse crystals with those in the range of depositing fine crystals. CONSTITUTION:A glass of ZnO-B2O3-SiO2 type in the range of depositing fine crystals as shown in B of the figure is mixed with a glass in the range of depositing coarse crystals shown in A in 1:100-1:2. Said mixing ratio is determined by the following method: The glass depositing coarse crystals almost centering in the range A contg. 64wt% ZnO, 30wt% B2O3, and 6wt% SiO2 and the glass almost centering in the range B for depositing fine crystals contg. 67wt% ZnO, 22wt% B2O3, and 11wt% SiO2 are prepared, respectively, and it was found that it is necessary to control the mixing ratio of them in 0.01-0.5 in order to deposit fine crystals. |
