| 摘要 |
PURPOSE:To prevent the stepwise difference of a polycrystalline silicon film and a single crystal silicon substrate by burying the film in the substrate. CONSTITUTION:After an oxidized film 102 is formed on the surface of an n type silicon substrate 101, the film 102 and the substrate 102 are etched by a plasma etching method, thereby forming a groove. A P type impurity-added polycrystalline silicon film 104 having the prescribed resistivity is covered on the overall surface of the substrate, the polycrystalline silicon film is removed by a plasma etching, and is allows to remain only in the groove. After the film 102 is removed, the n type impurity-added polycrystalline film is formed on the surface of the substrate to bury the groove, and the single crystal silicon film is partly converted by emitting a laser beam. The film 102 is again formed on the surface of the substrate, and P type impurity is added through the hole of the film 102, thereby forming a P type region 106. |
