| 摘要 |
The specification describes a process and apparatus for minimizing ion scattering and thereby improving resolution in ion beam lithography. First, a substrate (12) coated with a layer of ion beam resist (10) is provided at a chosen spaced distance from an ion beam source. Next, a monocrystalline membrane (2) with a patterned ion absorption region is positioned at a predetermined location between the substrate (12) and the ion beam source. The patterned ion absorption region may be either an ion absorption mask (4), such as gold, deposited on the surface of the monocrystalline membrane (2), or a pattern of ion-damaged regions (4 min ) within the monocrystalline membrane (2). Finally, a collimated wide area ion beam (6) is passed perpendicular to the surface of the membrane (2) and through crystal lattice channels (8) therein which are exposed by the patterned ion absorption region and which extend perpendicular to the membrane surface. The parallel paths established by the channels in the membrane (2) provide low resistance paths to the passage of ion beams and consequently minimize the angle of deflection of the ions passing from the membrane (2) to the target resist layer (10). |
