发明名称 EPITAXIAL GARNET LASER ELEMENT
摘要 PURPOSE:To reduce scattering and to increase the oscillation intensity of a laser light by growing a garnet film on a nonmagnetic garnet of a substrate having a surface inclined from a plane[110]or[211]in the range of 0 deg.<theta<=8 deg.. CONSTITUTION:Nd;GGG garnet is liquid epitaxially grown in a thickness of 180mum on a substrate having a surface inclined from[0-11]in the range of 0 deg.<theta<=8 deg. at[111]as a rotational axis from a crystal rod, thereby forming a chip of 10mm. length, an Ar laser light is incident from the end surface, thereby oscillating the Nd;GGG garnet. When the oscillating direction coincides with [111]in the growing direction of the substrate GGG garnet, the maximum intensity can be obtained.
申请公布号 JPS5854690(A) 申请公布日期 1983.03.31
申请号 JP19810153257 申请日期 1981.09.28
申请人 NIPPON DENKI KK 发明人 HIBIYA TAKETOSHI
分类号 H01S3/06;H01S3/063;H01S3/16 主分类号 H01S3/06
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