| 摘要 |
<p>Semiconductor laser wherein a grid-like conductive current mask (16) is fabricated between the active region (12) of the laser and one (18) of its electrodes. In one embodiment, the conductive current mask is fabricated in the bottom regions of a corrugated pattern that is created along the length of the semiconductor laser. In a second embodiment, the conductive current mask (48) is totally embedded within a lightly doped layer (44) that is grown proximate to the active region. The grid structure provides a novel means for regulating the light output of the laser.</p> |
