| 摘要 |
PURPOSE:To obtain a single crystal layer without exfoliation, by irradiating with the entire surface covered with another insulating film which is different in the reflection factor, when an insulating film is formed on the fixed region of a single crystal semiconductor substrate, and a non-single crystal semiconductor layer is deposited over the entire surface including the film resulting in the single crystallization of the non-single crystal layer by irradiating energy rays. CONSTITUTION:The oxide film 2 of 5,000-6,000Angstrom thick is produced on the fixed region of the single crystal Si substrate 1, and the polycrystalline Si layer 3 of 4,000Angstrom thick is deposited over the entire surface including the film. Next, with scanning over the entire surface, CW-Ar laser light 4 is irradiated thereon, and the layer 3 is annealed resulting in the single crystallization thereof. Thereat, the following steps are taken: the entire surface is covered with the oxide film 5 wherein the thickness is thickened to approx. 1mum to make the reflection factor different from that of the oxide film 2, and thereafter the laser light 4 is irradiated. Thus, the energy is adsorbed as the polycrystalline Si layer 3b positioned on the substrate 1 and the Si layer 3a positioned on the oxide film 2 absorb it, and the single crystallized layer is not exfoliated on the film 2. Or the variation of the film 5 thickness on the layers 3a and 3b is also preferable. |
