| 摘要 |
<p>PURPOSE:To obtain a single crystal layer of excellent quality with an excellent yield by a method wherein laminated semiconductor layers are made to contact with a semiconductor single crystal substrate at the same place and annealing is applied by using the substrate as a seed crystal when these semiconductor layers laminated on the substrate through the intermediary of insulation layers are grown and monocrystallized. CONSTITUTION:An insulation film 311 is connected on a semiconductor single crystal substrate 30, a semiconductor layer 321 is piled thereon, and by repeating similar processing, an insulation film 312, a semiconductor layer 322, an insulation film 313 and a semiconductor layer 323 are formed in lamination. Next, the semiconductor layers 321-323 are monocrystallized, and for this purpose, the respective parts of the semiconductor layers 321-323 are made to contact, in lamination, with the substrate 30 at the same place 33. Then, annealing is applied by using the substrate 30 as a seed crystal, and all the layers 321-323 are turned to single crystal, starting from the contact part. By this method, the yield of the monocrystallization is improved, and a single crystal layer of excellent quality can be obtained.</p> |
