| 摘要 |
PURPOSE:To attain high conversion efficiency by obtaining a high Eg using a hydride or halogenide of SixC1-x(0<=x<=0.5) to the P and N layers of P-I-N structure and by determining conductivity type by adding trivalent or tetravalent impurity in amount of 0.02-5mol%. CONSTITUTION:An Si(CH3)4, SiH(CH)3Cl etc. are used as the starting reactive substance, it is vaporized under the reduced pressurized condition of 0.01-10 Torr and then it is kept within a high frequency output plasma ambient as low as 5-50W. Thereby, coupling is easily broken and Si and C are combined. Accordingly, the SixC1-x(0<=X<=0.5) with Si:C of 1:3-1:4 can be stacked in the single layer by the plasma CVD method and its Eg can be set to a value 2.3- 3.5eV. Moreover, when a layer having an Eg which is equal to an interim value of those of N and I layers is provided between these N and I layers by adding the SiH4 of 10-200%, the depletion layer is more spreaded and thereby the photo-electric conversion eifficiency is as much improved. |
