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发明名称
PROCESS FOR THE SELF-ALIGNMENT OF DIFFERENTLY DOPED REGIONS OF A SEMICONDUCTOR STRUCTURE, AND APPLICATION OF THE PROCESS TO THE MANUFACTURE OF A TRANSISTOR
摘要
申请公布号
EP0021931(B1)
申请公布日期
1983.03.30
申请号
EP19800400815
申请日期
1980.06.06
申请人
THOMSON-CSF
发明人
ROCHE, MARCEL
分类号
H01L29/73;H01L21/027;H01L21/033;H01L21/331;(IPC1-7):01L21/00
主分类号
H01L29/73
代理机构
代理人
主权项
地址
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