| 摘要 |
PURPOSE:To remove the overhang state under a polycrystalline silicon, to improve yield and to prevent the degradation of quality by forming a silicon nitride film on a glass substrate regarding the foudation material of the thin-film transistor. CONSTITUTION:A silicon nitride film 12 is shaped onto the glass substrate 11, and an island 13 consisting of polycrystalline silicon is further formed onto the film 12. A gate oxide film 14 is shaped, and the polycrystalline silicon 15 functioning as an electrode is molded. The gate oxide film is removed while using the polycrystalline silicon 15 serving as the electrode as a mask in order to diffuse a source and a drain, source and drain diffusion layers 16 are formed, a layer insulating film 17 is further shaped onto the layers 16, and a contact hole is bored. Wiring 18 made of aluminum, etc. is further formed onto the film 17. The overhang state is not shaped under the polycrystalline silicon film. Accordingly, the state of the formation of the layer insulating film is excellent, and the aluminum wiring is not disconnected. |
