| 摘要 |
PURPOSE:To enhance reliability and characteristic of a semiconductor element through grasping ohmic contacting condition when mass production is to be performed by a method wherein a characteristic line of the resistance value and the distance between monitoring electrodes is formed, and the ohmically contacting resistance value is obtained from the zero value of the distance between the monitoring electrodes. CONSTITUTION:The monitoring electrodes having the contact area the same with ohmic electrodes 3a...3b are formed in the operating regions 6, 7, 8 having the same breadth and different length l1-l3 from the operating regions 2 between the ohmic electrodes 3a...3b in the prescribed region of a semiconductor substrate 1. Resistances between the monitoring electrodes in relation to the distances l1-l3 are measured to obtain the characteristic line I. The distances l1-l3 are made to be smaller gradually, and by obtaining the resistance value X of the characteristic line I when l=0 from the intersectional point of the characteristic line I and the resistance axis, ohmically contacting resistance can be measured extremely easily. Because the countermeasure of baking for the second time or alloying, etc., can be considered corresponding to the measured value through grasping correctly ohmic contacting condition when mass production is to be performed, reliability and characteristic of the element can be enhanced remarkably. |
