| 摘要 |
PURPOSE:To improve the reliability of manufactured articles of the titled device by completely preventing the corrosion of a multilayer Al wiring. CONSTITUTION:(a) An SiO2 film 2 is formed on the surface of an Si semiconductor substrate 1, whereon a semiconductor element was formed, is formed as an underlying insulating film, phosphur glass is coated on the surface of the above, and a window is opened on a part of the above film 2. (b) After polyimide resin 7 has been applied on the whole surface, said resin is hardened by baking it twice. Subsequently, a part of the above is covered by a mask material, an etching is performed, and the semiconductor at contact part is exposed. (c) The first Al vapor-deposition is performed, an unnecessary part is removed and the first layer Al wiring 3 is formed. (d) A polyimide resin film 4 is formed on the whole surface as an interlayer insulating film, a through-hole photoetching is performed, and a through hole 8 which is conducting to the first layer Al wiring is bored. (e) The second Al vapor-deposition is performed, the second layer Al wiring 5 is formed by performing a photoetching, and the second wiring structure is obtained by forming a polyimide resin film on the Al wiring 5. |
