| 发明名称 |
PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
| 摘要 |
<p>A process of manufacturing a semiconductor device having the steps of implanting impurity ions to a surface of a semiconductor substrate; and radiating the substrate with incoherent light of which scope is wider than said substrate whereby the implanted region is electrically activated.</p> |
| 申请公布号 |
CA1143867(A) |
申请公布日期 |
1983.03.29 |
| 申请号 |
CA19800366877 |
申请日期 |
1980.12.16 |
| 申请人 |
SONY CORPORATION |
发明人 |
NISHIYAMA, KAZUO;YANADA, TETSUNOSUKE;ARAI, MICHIO |
| 分类号 |
H01L21/26;H01L21/00;H01L21/265;H01L21/268;H05B3/00;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/26 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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