| 摘要 |
PURPOSE:To remove the oxide film of throughhole opening on the first conductive film surface of the first layer connecting the throughhole between the first and the second conductive film completely by a method wherein, when a semiconductor device is manufactured utilizing aluminum as one of the mental wiring, the oxide film is removed by means of etching making use of mixed gas containing reducing gas accelerating the removal. CONSTITUTION:In order to remove the barrier film on the aluminum surface of the first conductive film of the first layer, the chlorocarbon-base gas CF4 of hydrogen H2 as the etching gas of throughhole opening is utilized for reactive etching making use of the gas added with reducing gas to form the aluminum electrode wiring 5 as the second conductive film of the second layer. Through these procedures, the throughhole resistance between the first and the second conductive film so far formed will be made approximate 10<-3>OMEGAcm<-2> while the oxide film formed on the aluminum surface of the first layer is reduced to be removed by said hydrogen gas connecting aluminum with aluminum subject to low throughhole resistance. |
