| 摘要 |
PURPOSE:To manufacture the titled semiconductor device of high eliability at an excellent yield rate of production by a method wherein a crossing metal wiring layer, on which no breaking of wire will be generated, is formed without using the phosphur glass which makes the cause of formation of phosphoric acid. CONSTITUTION:As shown in diagram (a), the method same as that which has hithertofore been in use is used until source and drain diffusion layers 6 and 7 are formed using a gate electrode 5 as a mask. Then, as show in diagram (b), a polycrystalline silicon film 15 is coated on the whole surface using a vapor- phase growing method, the entire polycrystalline silicon film 15 is oxidized and replaced with a silicon dioxide film 16. Because the growing temperature of the polycrystalline silicon film 15 is relatively high, the film can be grown on the steeply formed stepped parts 18, 18, 18 and 18 on a conductive wiring 4 and the gate electrode 5. When the silicon dioxide film 16 is grown, the polycrystalline silicon film 15, located at the deeper part of the stepped parts 18, is grown in such a manner that said stepped parts 18, 18, 18 and 18 will be made smooth, and as the silicon dioxide film 16 is grown in such a manner that the process of oxidization is performed so as to promote the smoothness of the surface, the surface is formed uniform thereby eliminating causes for breaking of the metal wiring layer 17. |
