| 摘要 |
PURPOSE:To simplify a process while excellently keeping contact between a semiconductor base body and the electrode by activating the surfaces of aluminum evaporated films formed to both surfaces of the semiconductor base body and shaping a zinc substituting film and a nickel plating film. CONSTITUTION:The desired sections of the insulating oxide film 2 of the semiconductor base body 1 are bored, and the aluminum films 3 are formed to both surfaces of the base body 1 through a vacuum deposition method. The desired section of the aluminum film 3 is removed, and the interfaces among the aluminum films 3 of both surfaces and the base body 1 are changed into eutectics through heat treatment. The surfaces of the aluminum films 3 of both surfaces are treated by the mixed liquid of fluoric acid and nitric acid, and activated. The zinc substituting films 11 are shaped to the surfaces of the aluminum films 3 of both surfaces through a substitution plating method. The nickel plating films 12 are further formed to both surfaces through an electroless method. Lastly, solder 8 is attached. |
