| 摘要 |
PURPOSE:To compensate impurity concentration on an impurity introducing region, and to improve dielectric resistance by introducing an impurity forming conduction type reverse to the impurity to one part of the region for shaping a high-impurity concentration buried layer to the surface of a semiconductor substrate. CONSTITUTION:The donor is introduced to the surface of one main surface of a wafer 1 by using a mask, and the N<+> buried layer 2 is formed. The ions of an acceptor are implanted in an implantation region 4 by employing a mask 3', and the mask 3' is removed. An epitaxial Si layer 5 is shaped to the whole surface. One part of the donor impurity of the N<+> buried layer 2 rises and diffuses at that time, but it hardly rises in the implantation region 4. Isolations 6 are shaped by implanting and diffusing B ions. A base is diffused by B, a base 7 is formed, and P is deposited at high concentration and diffused and an emitter 8 and a collector extracting section 9 are shaped. |
