发明名称 COPPER OR COPPER ALLOY MADE LEAD WIRE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To make the wire bonding lead wire directly adhesive by a method wherein the surface of material is adjusted so that the surface roughness may not exceed 0.5mum at maximum height (Rmax) as well as the unit area of separated material, in-between material may not exceed 3X10<-3>mm.<2> to be minutely dispersed. CONSTITUTION:The phosphor bronze is rolled down to 0.25mm. thick plate and the unit area of the impurities such as Fe, Pb etc. separated out or segregated around or inside of particles or the additives such as Sn, P is made 3X10<-6>mm.<2> or less. Then the phosphor bronze is annealed for strain relief and provided with the various porperties such as strength, elongation etc. as the prerequisites for the lead wire to perform the wire bonding with the surface roughness made 0.5mum or less at Rmax by means of electrolytic grinding. The electrolyte grinding is performed for various periods of time making use of electrolyte comprising 63% of orthophosphoric acid, 9% of hydrochloric acid and 28% of water at 10A/dm<2> of current density, 2-22V of voltage and room temperature.
申请公布号 JPS5850763(A) 申请公布日期 1983.03.25
申请号 JP19810147845 申请日期 1981.09.21
申请人 NIPPON KOGYO KK 发明人 TSUJI MASAHIRO
分类号 H01L23/50;C25F3/16;H01L21/60 主分类号 H01L23/50
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