| 摘要 |
PURPOSE:To make possible the automatic flow production for thin film by forming a laminated semiconductor thin film on a substrate supplied intermittently from a stocking room and moved continuously and sending intermittently a finished substrate to a rear room for extraction. CONSTITUTION:An intermediate room 13 has the degree of vacuum higher than those of reaction rooms 1, 2, 3. Even if a substrate 10 with a p-layer formed thereupon is moved from the reaction room 1 to the reaction room 2, an atmosphere containing diborane or secons products in the room 1 does not move with the substrate or a conveyor to the room 2 because a reverse air flow at the entrance from the intermediate room 13 to the room 2 prevents it from entering the room 2. With a door 8 closed, material substrates are brought into a fabrication room 15 through an insertion door 9, and with the door 9 closed the room 15 is made vacuous. Then, with the door 8 open the substrate 10 is sent to a front room 4. The finished substrate 10 in a rear room 5 is transferred to an extraction room 16 where, after being returned to normal pressure, it is extracted by opening an airtight door 12. |
