| 摘要 |
PURPOSE:To prevent the eluting or diffusion of P by a method wherein an interlayer insulator film with a high concentration of P or the like is surrounded with a separate insulator film composed of Si nitride or the like. CONSTITUTION:On a semiconductor substrate 11 provided with an element region, a first insulator film 21 is so formed that it includes at least the contact region of said element region. Further, a second insulator film 25 is provided that touches the first insulator film 21 at the contact region. An interlayer insulator film 23 smoothing the element region surface is formed, surrounded by the first and the second insulator layers 21 and 25. In the contact region where the first and second insulator films 21 and 25 touching each other surrounding the interlayer insulator film 23, a through contact hole 24 is provided with its diameter not more than the region diameter. The first and second insulator films 21 and 25 are composed of Si nitride film and the interlayer insulator 23 is composed of an insulator (PSG film) composed chiefly of P glass. |
