| 摘要 |
PURPOSE:To enable to form a current stricture structure of high effect and improve the yield of buried semiconductor laser, by combining easy and high reproducibility processes without necessitating mask-alignment operations. CONSTITUTION:The mesa uppermost part 5 is constituted of a GaAs layer for ohmic electrode formation, and the buried layer 6 is constituted of an AlxGa1-xAs layer, e.g. Al0.35Ga0.65As layer. An appropriate seelective crystal growing mask (SiO2, Si3N4, etc.) is previously provided on the GaAs layer 5 for ohmic electrode formation, and, after forming a mesa including an active region by an etching, the secondary crystal growth to grow the buried layer is performed, and thereafter the selective crystal growing mask is removed. By utilizing the difference of etching speeds for anode oxide films 9a, 9b of GaAs and AlGaAs, only the anode oxide film 9a on the GaAs layer 5 can be selectively removed even without using the mask for selective etching. For the etchant, what can etch the anode oxide film 9a of GaAs, e.g. HCl, H2SO4, NaOH can be used. |
